| PART |
Description |
Maker |
| IPB80N04S2-04 IPI80N04S2-04 SP0002-18154 SP0002-19 |
80 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
OptiMOSPower-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPP100N04S2-04 IPB100N04S2-04 SP0002-19061 SP0002- |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
100 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
|
Infineon Technologies AG
|
| IPB100N08S2L-07 IPP100N08S2L-07 SP0002-19052 SP000 |
100 A, 75 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
OptiMOSPower-Transistor
|
Infineon Technologies AG
|
| IPB100N08S2-07 IPI100N08S2-07 IPP100N08S2-07 SP000 |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
OPTIMOS⑶ POWER-TRANSISTOR
OptiMOS㈢ Power-Transistor
OptiMOS? Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| UPA1870GR-9JG UPA1870 UPA1870GR-9JG-E1 UPA1870GR-9 |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
TRANSISTOR | MOSFET | HALF BRIDGE | 20V V(BR)DSS | 6A I(D) | SO
|
NEC[NEC]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| UPA1807 UPA1807GR-9JG UPA1807GR-9JG-E1 UPA1807GR-9 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
NEC[NEC]
|
| SPD06N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPW15N60C3 |
for lowest Conduction Losses & fastest Switching
Cool MOS™ Power Transistor
Cool MOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| TPC8113 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| SSM3J134TU |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?
|
Toshiba Semiconductor
|
